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  2n5088 2n5089 mmbt5088 mmbt5089 npn general purpose amplifier this device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 a to 50 ma. absolute maximum ratings* ta = 25c unless otherwise noted symbol parameter value units v ceo collector-emitter voltage 2n5088 2n5089 30 25 v v v cbo collector-base voltage 2n5088 2n5089 35 30 v v v ebo emitter-base voltage 4.5 v i c collector current - continuous 100 ma t j , t st g operating and storage junction temperature range -55 to +150 c notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. thermal characteristics ta = 25c unless otherwise noted symbol characteristic max units 2n5088 2n5089 *mmbt5088 *mmbt5089 p d total device dissipation derate above 25 c 625 5.0 350 2.8 mw mw / c r jc thermal resistance, junction to case 83.3 c/w r j a thermal resistance, junction to ambient 200 357 c/w c b e to-92 c b e sot-23 mark: 1q / 1r * device mounted on fr-4 pcb 1.6" x 1.6" x 0.06." ? 2001 fairchild semiconductor c orporation 2n5088 / mmbt5088 / 2n5089 / mmbt5089 2n5088/2n5089/mmbt5088/mmbt5089, rev a
3 2n5088 / mmbt5088 / 2n5089 / mmbt5089 npn general purpose amplifier (continued) electrical characteristics ta = 25c unless otherwise noted off characteristics symbol parameter test conditions min max units on characteristics h fe dc current gain i c = 100 a, v ce = 5.0 v 5088 5089 i c = 1.0 ma, v ce = 5.0 v 5088 5089 i c = 10 ma, v ce = 5.0 v* 5088 5089 300 400 350 450 300 400 900 1200 v ce( sat ) collector-emitter saturation voltage i c = 10 ma, i b = 1.0 ma 0.5 v v be( on ) base-emitter on voltage i c = 10 ma, v ce = 5.0 v 0.8 v small signal characteristics v (br)ceo collector-emitter breakdown voltage* i c = 1.0 ma, i b = 0 5088 5089 30 25 v v v (br)cbo collector-base breakdown voltage i c = 100 a, i e = 0 5088 5089 35 30 v v i cbo collector cutoff current v cb = 20 v, i e = 0 5088 v cb = 15 v, i e = 0 5089 50 50 na na i ebo emitter cutoff current v eb = 3.0 v, i c = 0 v eb = 4.5 v, i c = 0 50 100 na na spice model npn (is=5.911f xti=3 eg=1.11 vaf=62.37 bf=1.122k ne=1.394 ise=5.911f ikf=14.92m xtb=1.5 br=1.271 nc=2 isc=0 ikr=0 rc=1.61 cjc=4.017p mjc=.3174 vjc=.75 fc=.5 cje=4.973p mje=.4146 vje=.75 tr=4.673n tf=821.7p itf=.35 vtf=4 xtf=7 rb=10) f t current gain - bandwidth product i c = 500 a,v ce = 5.0 ma, f = 20 mhz 50 mhz c cb collector-base capacitance v cb = 5.0 v, i e = 0, f = 100 khz 4.0 pf c eb emitter-base capacitance v be = 0.5 v, i c = 0, f = 100 khz 10 pf h fe small-signal current gain i c = 1.0 ma, v ce = 5.0 v, 5088 f = 1.0 khz 5089 350 450 1400 1800 nf noise figure i c = 100 a, v ce = 5.0 v, 5088 r s = 10 k ? , 5089 f = 10 hz to 15.7 khz 3.0 2.0 db db * pulse test: pulse width 300 s, duty cycle 2.0%
typical characteristics collector-emitter saturation voltage vs collector current 0.1 1 10 100 0.05 0.1 0.15 0.2 0.25 0.3 i - collector current (ma) v - collector-emitter voltage (v) c cesat 25 c - 40 c 125 c = 10 base-emitter saturation voltage vs collector current 0.1 1 10 100 0.2 0.4 0.6 0.8 1 i - collector current (ma) v - collector-emitter voltage (v) c besat = 10 25 c - 40 c 125 c base-emitter on voltage vs collector current 0.1 1 10 40 0.2 0.4 0.6 0.8 1 i - collector current (ma) v - base-emitter on voltage (v) c beon v = 5.0 v ce 25 c - 40 c 125 c typical pulsed current gain vs collector current 0.01 0.03 0.1 0.3 1 3 10 30 100 0 200 400 600 800 1000 1200 i - collector current (ma) h - typical pulsed current gain c fe 125 c 25 c - 40 c v = 5.0 v ce collect or-cutoff current vs ambient temperature 25 50 75 100 125 150 0. 1 1 10 t - a mbi e nt t emp er at ur e ( c) i - c o l le ct o r cu rr en t ( n a) a cbo v = 45v cb 2n5088 / mmbt5088 / 2n5089 / mmbt5089 npn general purpose amplifier (continued)
3 2n5088 / mmbt5088 / 2n5089 / mmbt5089 typical characteristics (continued) npn general purpose amplifier (continued) input and output capacitance vs reverse bias voltage 048121620 0 1 2 3 4 5 reverse bias voltage (v) capacitance (pf) f = 1.0 mhz c ob c te wideband noise frequency vs source resistance 1,000 2,000 5,000 10,000 20,000 50,000 100,000 0 1 2 3 4 5 r - source resistance ( ) nf - noise figure (db) v = 5.0 v bandwidt h = 15.7 khz ce i = 10 a c i = 100 a c s ? i = 30 a c contours of constant gain bandwidth product (f ) 0.1 1 10 100 1 2 3 5 7 10 i - collector current (ma) v - collector voltage (v) c 175 mhz t ce 150 mhz 125 mhz 75 mhz 100 mhz power dissipation vs ambient temperature 0 25 50 75 100 125 150 0 125 250 375 500 625 temperature ( c) p - power dissipation (mw) d o to-92 sot-23 noise figure vs frequency 0.0001 0.001 0.01 0.1 1 10 100 0 2 4 6 8 10 f - frequency (mhz) nf - noise figure (db) v = 5.0v ce i = 200 a, r = 10 k ? c s i = 1.0 ma, r = 500 ? c s i = 100 a, r = 10 k ? c s i = 1.0 ma, r = 5.0 k ? c s normalized collect or-cutoff curre nt vs ambie nt temperature 25 50 75 100 125 150 1 10 10 0 1000 t - ambie nt temperature ( c) ch ar ac ter is tic s r elati ve to valu e at t = 25 c a a
typical characteristics (continued) contours of constant narrow band noise figure 1 10 100 1,000 100 200 500 1,000 2,000 5,000 10,000 i - collector current ( a) r - source resistance ( ) c ? s v = 5.0 v f = 1.0 khz bandwidth = 200 hz ce 6.0 db 3.0 db 4.0 db 8.0 db 2.0 db contours of constant narrow band noise figure 1 10 100 1,000 100 200 500 1,000 2,000 5,000 10,000 i - collector current ( a) r - source resistance ( ) c ? s v = 5. 0 v f = 100 hz bandwidth = 20 hz ce 3.0 db 4.0 db 8.0 db 10 db 12 db 14 db 6.0 db contours of constant narrow band noise figure 1 10 100 1000 100 200 500 1000 2000 5000 10000 i - collector current ( a) r - source resistance ( ) 6.0 db 3.0 db 4.0 db 8.0 db 2.0 db 1.0 db c v = 5.0v f = 10khz bandwidth = 2.0khz ce ? s contours of constant narrow band noise figure 0.01 0.1 1 10 100 200 500 1000 2000 5000 10000 i - collector current ( a) r - source resistance ( ) 7.0 db 3.0 db 4.0 db 8.0 db 2.0 db 5.0 db c v = 5.0v ce ? s f = 1.0 mhz bandwidth = 200khz 6.0 db 2n5088 / mmbt5088 / 2n5089 / mmbt5089 npn general purpose amplifier (continued)
3 2n5088 / mmbt5088 / 2n5089 / mmbt5089 typical common emitter characteristics (f = 1.0 khz) npn general purpose amplifier (continued) typical common emitter characteristics 0.1 0.2 0.5 1 2 5 10 20 50 100 0.01 0.1 1 10 100 i - collector current (ma) characteristics relative to value(i =1ma) c c f = 1.0khz h oe h oe h and h ie h fe h re h ie h fe re typical common emitter characteristics -100 -50 0 50 100 150 0. 5 0. 6 0. 7 0. 8 0. 9 1 1. 1 1. 2 1. 3 1. 4 1. 5 t - j u nc t io n t emp er at ur e ( c) characteristics relative to value(t =25 c) j a h oe h re h ie h fe h oe h re h ie h fe v = 5.0v f = 1.0khz i = 1.0ma ce c typical common emitter charact eristics 0 5 10 15 20 25 0. 8 0. 9 1 1. 1 1. 2 1. 3 1. 4 v - collector voltage (v) c h ar ac ter isti cs r elati ve to valu e( v =5v) ce ce i = 1.0ma f = 1.0khz t = 25 c c a h oe h oe h re h ie h fe h re h ie h fe
trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher smart start? supersot?-3 supersot?-6 supersot?-8 fastr? globaloptoisolator? gto? hisec? isoplanar? microwire? optologic? optoplanar? pacman? pop? rev. g ? acex? bottomless? coolfet? crossvolt ? dome? e 2 cmos tm ensigna tm fact? fact quiet series? fast syncfet? tinylogic? uhc? vcx? ? ?
careers | sitema go datasheets, samples, buy technical information applications design center support company investors my f a home >> find products >> product status/pricing/packaging 2n5088 npn general purpose amplifier general description back to top contents ? general description ? product status/pricing/packaging ? order samples ? models ? qualification support this device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1a to 50 ma. datasheet download this datasheet e - mail this datasheet this page print version product product status pb-free status pricing* package type leads packing method package marking convention** 2n5088bu full production $0.025 to - 92 3 bulk line 1: 2n line 2: 5088 line 3: -&3 2N5088TA full production $0.025 to - 92 3 ammo line 1: 2n line 2: 5088 line 3: -&3 2N5088TAr full production $0.025 to - 92 3 ammo line 1: 2n line 2: 5088 line 3: -&3 2N5088TA_nl full production n/a to - 92 3 ammo line 1: 2n line 2: 5088 line 3: -&3 related links request samples how to order products product change notices (pcns) support sales support quality and reliability design cente r pa g e 1 of 3 product folder - fairchild p/n 2n5088 - npn general pur p ose am p lifie r 16-au g -2007 mhtml:file://c:\temp\2N5088TAr.mht
back to top models back to top qualification support click on a product for detailed qualification data 2n5088tf full production $0.025 to - 92 3 tape reel line 1: 2n line 2: 5088 line 3: -&3 2n5088tfr full production $0.025 to - 92 3 tape reel line 1: 2n line 2: 5088 line 3: -&3 2n5088_d81z full production n/a to - 92 3 tape reel line 1: $y (fairchild logo) & z (asm. plant code) & 3 (3-digit date code) line 2: 2n line 3: 5088 2n5088_j61z full production n/a to - 92 3 bulk line 1: $y (fairchild logo) & z (asm. plant code) & 3 (3-digit date code) line 2: 2n line 3: 5088 * fairchild 1,000 piece budgetary pricing ** a sample button will appear if the part is available through fa irchild's on-line samples program. if there is no sample butt on, please contact a fairchild distributo r to obtain samples indicates product with pb -free second-level interconne ct. for more information click here. package marking information for product 2n5088 is available. click here for more information . package & leads condition temperature range vcc range software version revision date pspice to-92-3 electrical/thermal -55c to 150c 0v to 35v 9.2 jan 26, 2003 pa g e 2 of 3 product folder - fairchild p/n 2n5088 - npn general pur p ose am p lifie r 16-au g -2007 mhtml:file://c:\temp\2N5088TAr.mht
back to top product 2n5088bu 2N5088TA 2N5088TAr 2N5088TA_nl 2n5088tf 2n5088tfr 2n5088_d81z 2n5088_j61z ? 2007 fairchild semiconductor products | design center | support | company news | investors | my fairchild | contact us | site index | privacy policy | site terms & conditions | standard terms & conditions o pa g e 3 of 3 product folder - fairchild p/n 2n5088 - npn general pur p ose am p lifie r 16-au g -2007 mhtml:file://c:\temp\2N5088TAr.mht


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